| PART |
Description |
Maker |
| 567UVG010MFBJ 187UVG016MFBJ |
High temperature ?Very Low ESR ?High ripple current ?stable with temperature ?High frequency
|
Illinois Capacitor, Inc...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SK1812L-G03-D-K SK1812 SK1812-AE3-4-R SK1812-G03-D |
BIPOLAR LATCH TYPE HALL - EFFECT FOR HIGH-TEMPERATURE OPERATION
|
UTC[Unisonic Technologies]
|
| DS446 |
Silicon Epitaxial Planar Type Temperature Compensation Use Very High-Speed Switching Diode
|
SANYO
|
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| LFCN-2000 LFCN-2000D |
Low Pass Filter
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:16VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:10uF RoHS Compliant: Yes
|
MINI[Mini-Circuits]
|
| WS57C49C-1 WS57C49C-35 WS57C49C-35CMB WS57C49C-35D |
8K X 8 UVPROM, 55 ns, CQCC28
CURRENT LIMITR INRSH 5.0 OHM 20% 高K的军事8的CMOS胎膜早破/ RPROM
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM 高K的军事8的CMOS胎膜早破/ RPROM
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:7R; Tolerance, resistance: /-20%; Beta value:3060; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:33R; Tolerance, resistance:20%; Beta value:3300; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors
High Temperature TaNFilm垄莽 Chip Resistors
High Temperature TaNFilm? Chip Resistors
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
|
Welwyn Components Limited
TT Electronics / Welwyn
Welwyn Components, Ltd.
Welwyn Components Limit...
|
| 44193-0005 |
Modular Connector; No. of Contacts:6; No. of Ports:2; Body Material:PA Polyamide (Nylon), High Temperature, Glass-filled; Color:Black; Mounting Type:Through Hole RoHS Compliant: Yes
|
MOLEX INC
|
| 0676432991 |
Universal Serial Bus (USB) Shielded I/O Receptacle, Right Angle, Type A, High-Temperature Black Nylon, 0.76渭m (30渭") Gold (Au) Plating, PCB Thickness 1.60mm
|
Molex Electronics Ltd.
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
|
Motorola
|
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